3SK319 silicon n-channel dual gate mos fet uhf rf amplifier ade-208-602 (z) 1st. edition feb. 1998 features low noise characteristics; (nf= 1.4 db typ. at f= 900 mhz) excellent cross modulation characteristics capable low voltage operation; +b= 5v outline mpak-4 1 4 3 2 1. source 2. gate1 3. gate2 4. drain note: marking is ?b.
3SK319 2 absolute maximum ratings (ta = 25?) item symbol ratings unit drain to source voltage v ds 6v gate1 to source voltage v g1s 6v gate2 to source voltage v g2s 6v drain current i d 20 ma channel power dissipation pch 150 mw channel temperature tch 150 c storage temperature tstg ?5 to +150 c electrical characteristics (ta = 25?) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 6 v i d = 200 m a, v g1s = v g2s = 0 gate1 to source breakdown voltage v (br)g1ss 6v i g1 = 10 m a, v g2s = v ds = 0 gate2 to source breakdown voltage v (br)g2ss 6v i g2 = 10 m a, v g1s = v ds = 0 gate1 to source cutoff current i g1ss 100 na v g1s = 5v, v g2s = v ds = 0 gate2 to source cutoff current i g2ss 100 na v g2s = 5v, v g1s = v ds = 0 gate1 to source cutoff voltage v g1s(off) 0.5 0.7 1.0 v v ds = 5v, v g2s = 3v, i d = 100 m a gate2 to source cutoff voltage v g2s(off) 0.5 0.7 1.0 v v ds = 5v, v g1s = 3v, i d = 100 m a drain current i ds(op) 0.5 4 10 ma v ds = 3.5v, v g1s = 1.1v, v g2s = 3v forward transfer admittance |y fs | 182432msv ds = 3.5v, v g2s = 3v i d = 10ma , f=1khz input capacitance c iss 1.3 1.6 1.9 pf v ds = 3.5v, v g2s = 3v output capacitance c oss 0.9 1.2 1.5 pf i d = 10ma , f= 1mhz reverse transfer capacitance c rss 0.019 0.03 pf power gain pg 18 21 db v ds = 3.5v, v g2s = 3v noise figure nf 1.4 2.2 db i d = 10ma , f=900mhz
3SK319 3 200 150 100 50 0 50 100 150 200 20 16 12 8 4 0 12 345 20 16 12 8 4 0 12345 0 2 46810 v = 3 v g2s channel power dissipation pch (mw) ambient temperature ta ( c) maximum channel power dissipation curve drain to source voltage v (v) ds drain current i (ma) d typical output characteristics drain current i (ma) d drain current i (ma) d gate1 to source voltage v (v) g1s gate2 to source voltage v (v) g2s drain current vs. gate1 to source voltage 4 8 12 16 20 0.9 v 1.0 v 1.1 v 1.2 v 1.3 v 1.6 v 1.5 v 1.4 v v = 1.7 v g1s 0.8 v drain current vs. gate2 to source voltage v = 3.5 v ds v = 3.5 v ds 2.0 v v = 1.0 v g1s 1.2 v 1.4 v 1.6 v 1.8 v 2.0 v 2.5 v 1.5 v v = 1.0 v g2s
3SK319 4 25 20 15 10 5 0 5 10152025 30 24 18 12 6 0 0.4 0.8 1.2 1.6 2.0 v = 3 v g2s 1 v 2 v 5 4 3 2 1 0 5 10152025 25 20 15 10 5 0 2 46810 forward transfer admittance |y | (ms) fs gate1 to source voltage v (v) g1s power gain pg (db) drain current i (ma) d power gain vs. drain current forward transfer admittance vs. gate1 voltage v = 3.5 v ds 1.5 v 2.5 v drain current i (ma) d noise figure nf (db) noise figure vs. drain current power gain vs. drain to source voltage power gain pg (db) drain to source voltage v (v) ds v = 3.5 v v = 3 v f = 900 mhz ds g2s v = 3.5 v v = 3 v f = 900 mhz ds g2s v = 3 v i = 10 ma f = 900 mhz g2s d
3SK319 5 5 4 3 2 1 0 2 46810 0 1 2345 01 23 4 5 noise figure nf (db) noise figure vs. drain to source voltage drain to source voltage v (v) ds power gain vs. gate2 to source voltage gate2 to source voltage v (v) g2s power gain pg (db) noise figure vs. gate2 to source voltage gate2 to source voltage v (v) g2s noise figure nf (db) v = 3 v i = 10 ma f = 900 mhz g2s d 5 4 3 2 1 25 20 15 10 5 v = 3.5 v f = 900mhz ds v = 3.5 v f = 900mhz ds
3SK319 6 10 5 4 3 2 1.5 1 .8 ? ? ? ? ?0 .6 .4 .2 0 ?2 ?4 ?6 ?8 ? ?.5 .2 .4 .6 .8 1 2 3 4 5 1.5 10 scale: 1 / div. 0 30 60 90 120 150 180 ?50 ?0 ?0 ?0 ?20 scale: 0.002 / div. 0 30 60 90 120 150 180 ?50 ?0 ?0 ?0 ?20 10 5 4 3 2 1.5 1 .8 ? ? ? ? ?0 .6 .4 .2 0 ?2 ?4 ?6 ?8 ? ?.5 .2 .4 .6 .8 1 2 3 4 5 1.5 10 test condition : 50 to 1000 mhz (50 mhz step) ds g2s v = 3.5 v , v = 3 v i = 10ma d s11 parameter vs. frequency s21 parameter vs. frequency s12 parameter vs. frequency s22 parameter vs. frequency test condition : 50 to 1000 mhz (50 mhz step) ds g2s v = 3.5 v , v = 3 v i = 10ma d test condition : 50 to 1000 mhz (50 mhz step) ds g2s v = 3.5 v , v = 3 v i = 10ma d test condition : 50 to 1000 mhz (50 mhz step) ds g2s v = 3.5 v , v = 3 v i = 10ma d
3SK319 7 sparameter (v ds = 3.5v, v g2s = 3v, i d = 10ma, zo = 50 w ) s11 s21 s12 s22 f (mhz) mag ang mag ang mag ang mag ang 50 1.000 ?.8 2.41 176.3 0.00068 89.1 0.999 ?.2 100 0.998 ?.8 2.41 171.9 0.00176 88.5 0.996 ?.5 150 0.997 ?.1 2.39 167.6 0.00223 80.7 0.996 ?.7 200 0.994 ?2.2 2.38 163.7 0.00303 76.6 0.994 ?.7 250 0.994 ?5.1 2.37 159.8 0.00365 79.1 0.991 ?1.0 300 0.986 ?8.5 2.35 155.5 0.00414 75.4 0.988 ?3.2 350 0.978 ?1.3 2.30 151.4 0.00484 75.0 0.983 ?5.3 400 0.972 ?4.1 2.28 147.6 0.00533 78.0 0.980 ?7.4 450 0.969 ?7.0 2.26 143.6 0.00588 71.6 0.976 ?9.6 500 0.954 ?9.7 2.23 140.0 0.00617 69.5 0.971 ?1.7 550 0.955 ?2.8 2.19 135.9 0.00666 71.5 0.966 ?3.7 600 0.941 ?5.7 2.17 132.2 0.00672 70.6 0.960 ?5.6 650 0.932 ?8.3 2.14 128.6 0.00694 69.0 0.955 ?7.8 700 0.924 ?1.3 2.09 125.0 0.00709 71.4 0.948 ?9.9 750 0.919 ?4.1 2.07 121.5 0.00689 69.0 0.942 ?1.8 800 0.905 ?6.9 2.03 117.9 0.00699 68.9 0.937 ?3.8 850 0.896 ?9.2 2.00 114.7 0.00644 74.2 0.930 ?5.8 900 0.884 ?2.4 1.96 110.4 0.00633 75.5 0.923 ?7.6 950 0.880 ?4.7 1.93 107.1 0.00585 77.8 0.917 ?9.8 1000 0.866 ?7.7 1.89 103.8 0.00605 82.1 0.910 ?1.9
3SK319 8 package dimensions 0.16 0 ?0.1 + 0.1 ?0.06 0.95 0.85 1.8 0.2 0.65 1.5 0.15 0.65 1.1 + 0.2 ?0.1 0.95 0.95 1.9 0.2 2.95 0.2 0.4 + 0.1 ?0.05 0.6 + 0.1 ?0.05 2.8 + 0.2 ?0.6 0.3 0.4 + 0.1 ?0.05 hitachi code jedec eiaj mass (reference value) mpak-4 conforms 0.013 g 0.4 + 0.1 ?0.05 as of january, 2001 unit: mm
3SK319 9 cautions 1. hitachi neither warrants nor grants licenses of any rights of hitachi? or any third party? patent, copyright, trademark, or other intellectual property rights for information contained in this document. hitachi bears no responsibility for problems that may arise with third party? rights, including intellectual property rights, in connection with use of the information contained in this document. 2. products and product specifications may be subject to change without notice. confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. hitachi makes every attempt to ensure that its products are of high quality and reliability. however, contact hitachi? sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. design your application so that the product is used within the ranges guaranteed by hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail- safes, so that the equipment incorporating hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the hitachi product. 5. this product is not designed to be radiation resistant. 6. no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from hitachi. 7. contact hitachi? sales office for any questions regarding this document or hitachi semiconductor products. hitachi, ltd. semiconductor & integrated circuits. nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan tel: tokyo (03) 3270-2111 fax: (03) 3270-5109 copyright ? hitachi, ltd., 2000. all rights reserved. printed in japan. hitachi asia ltd. hitachi tower 16 collyer quay #20-00, singapore 049318 tel : <65>-538-6533/538-8577 fax : <65>-538-6933/538-3877 url : http://www.hitachi.com.sg url northamerica : http://semiconductor.hitachi.com/ europe : http://www.hitachi-eu.com/hel/ecg asia : http://sicapac.hitachi-asia.com japan : http://www.hitachi.co.jp/sicd/indx.htm hitachi asia ltd. (taipei branch office) 4/f, no. 167, tun hwa north road, hung-kuo building, taipei (105), taiwan tel : <886>-(2)-2718-3666 fax : <886>-(2)-2718-8180 telex : 23222 has-tp url : http://www.hitachi.com.tw hitachi asia (hong kong) ltd. group iii (electronic components) 7/f., north tower, world finance centre, harbour city, canton road tsim sha tsui, kowloon, hong kong tel : <852>-(2)-735-9218 fax : <852>-(2)-730-0281 url : http://www.hitachi.com.hk hitachi europe ltd. electronic components group. whitebrook park lower cookham road maidenhead berkshire sl6 8ya, united kingdom tel: <44> (1628) 585000 fax: <44> (1628) 585160 hitachi europe gmbh electronic components group dornacher stra b e 3 d-85622 feldkirchen, munich germany tel: <49> (89) 9 9180-0 fax: <49> (89) 9 29 30 00 hitachi semiconductor (america) inc. 179 east tasman drive, san jose,ca 95134 tel: <1> (408) 433-1990 fax: <1>(408) 433-0223 for further information write to: colophon 2.0
|
